1 Overview

The target material is the target material bombarded by high-speed charged particles. There are metals, alloys, oxides, etc. Replace different target materials (such as aluminum, copper, stainless steel, titanium, nickel targets, etc.), you can get different film systems (such as super-hard, wear-resistant, anti-corrosion alloy film, etc.).

(1) Metal targets: nickel target, Ni, titanium target, Ti, zinc target, Zn, chromium target, Cr, magnesium target, Mg, niobium target, Nb, tin target, Sn, aluminum target, Al, indium target, In, iron target, Fe, zirconium aluminum target, ZrAl, titanium aluminum target, TiAl, zirconium target, Zr, aluminum silicon target, AlSi, silicon target, Si, copper target Cu, tantalum target T, a, germanium target, Ge, Silver target, Ag, cobalt target, Co, gold target, Au, gadolinium target, Gd, lanthanum target, La, yttrium target, Y, cerium target, Ce, tungsten target, w, stainless steel target, nickel-chromium target, NiCr, hafnium Target, Hf, molybdenum target, Mo, iron-nickel target, FeNi, tungsten target, W, etc.　　

(2) Ceramic targets: ITO target, magnesium oxide target, iron oxide target, silicon nitride target, silicon carbide target, titanium nitride target, chromium oxide target, zinc oxide target, zinc sulfide target, silicon dioxide target, one Silicon oxide target, cerium oxide target, zirconium dioxide target, niobium pentoxide target, titanium dioxide target, zirconium dioxide target, hafnium dioxide target, titanium diboride target, zirconium diboride target, tungsten trioxide target, Aluminum oxide target, tantalum oxide, niobium pentoxide target, magnesium fluoride target, yttrium fluoride target, zinc selenide target, aluminum nitride target, silicon nitride target, boron nitride target, titanium nitride target , Silicon carbide targets, lithium niobate targets, praseodymium titanate targets, barium titanate targets, lanthanum titanate targets, nickel oxide targets, sputtering targets, etc.

2. The main performance requirements of the target

(1) Purity

Purity is one of the main performance indicators of the target, because the purity of the target has a great influence on the performance of the film. However, in practical applications, the purity requirements of the target materials are also different. For example, with the rapid development of the microelectronics industry, the size of silicon wafers has grown from 6", 8" to 12", and the wiring width has been reduced from 0.5um to 0.25um, 0.18um or even 0.13um, the previous target purity of 99.995% It can meet the process requirements of 0.35umIC, and the preparation of 0.18um lines requires 99.999% or even 99.9999% for the purity of the target material. 　　

(2) Impurity content

Impurities in the solids of the target and oxygen and water vapor in the pores are the main sources of contamination of the deposited film. Different targets have different requirements for different impurity contents. For example, pure aluminum and aluminum alloy targets used in the semiconductor industry have special requirements for alkali metal content and radioactive element content.

(3) Density

In order to reduce the pores in the solids of the target and improve the performance of the sputtered film, the target is usually required to have a higher density. The density of the target not only affects the sputtering rate, but also affects the electrical and optical properties of the film. The higher the target density, the better the film performance. In addition, increasing the density and strength of the target allows the target to better withstand the thermal stress during sputtering. Density is also one of the key performance indicators of the target.

(4) Grain size and grain size distribution 　

The target material is usually polycrystalline and the grain size can be in the order of microns to millimeters. For the same target material, the sputtering rate of a target with fine grains is faster than that of a target with coarse grains; the thickness distribution of the film deposited by sputtering with a target with a small difference in grain size (uniform distribution) is more uniform .

3. Material

TA0, TA1, TA2, TA9, TA10, ZR2, ZR0, GR5, GR2, GR1, TC11, TC6, TC4, TC3, TC2, TC1

4. Purpose

It is widely used in decorative coatings, wear-resistant coatings, electronic industry CDs, VCDs and other optical discs and various magnetic disc coatings.

Tungsten-titanium (W-Ti) films and tungsten-titanium (W-Ti)-based alloy films are high-temperature alloy films with a series of irreplaceable excellent properties. Tungsten has properties such as high melting point, high strength and low coefficient of thermal expansion. W/Ti alloy has low resistance coefficient, good thermal stability and oxidation resistance. Such as various devices require metal wiring that plays a conductive role, such as Al, Cu, and Ag have been widely used and researched. However, the wiring metal itself is easily oxidized, reacts with the surrounding environment, and has poor adhesion to the dielectric layer. It is easy to diffuse into the substrate material of devices such as Si and SiO2, and the metal and Si will form at a lower temperature. Compounds have played the role of impurities, which greatly reduced the performance of the device. The W-Ti alloy has stable thermomechanical properties, low electron mobility, high corrosion resistance and chemical stability, making it easy to use as a wiring diffusion barrier, especially suitable for use in high current and high temperature environments .

5. Development prospects

Tungsten-titanium target has recently been developed as a coating material for photovoltaic cells. It is the best choice as a barrier layer for third-generation solar cells.　　

Due to the excellent performance of the W-Ti series of thin films, the application volume has increased dramatically in recent years. In 2008, the world consumption of W-Ti targets has reached 400t. With the development of the photovoltaic industry, the demand for such targets will increase. The bigger. According to industry forecasts, its usage will increase significantly. The international solar cell market is growing at a rate of 100%. At present, there are many companies in the world participating in the further development of the solar market and have already put them into the market, such as Wverthsurlfulcell in Germany, Global Solar Energy in the United States, Honda showa Solar shell in Japan, Hitachi Metal Companies, etc.

The ultra-large size, high density and high purity W-Ti target developed by my country is a new type of ion sputtering coating target material. It can be widely used in the barrier layer or toning layer of the display screen, the decorative layer of the notebook computer, the packaging of the battery, and the barrier layer of the solar (photovoltaic) battery. On the other hand, it can also drive the upgrading of the products of my country's tungsten industry and obtain higher added value.

Baoji Hongyada Nonferrous Metal Material Co., Ltd.

Address: Xuguang Industrial Park, Baotai New District, High-tech Zone, Baoji City

Contact: Zhang Hongbin

Mobile phone: 13809171560 (same number on WeChat)

Electricity: 0917-3854158

E-mail: hongyadajinshu@163.com

Skype: carrolyn851

Q　　Q：379855550